The 2 best capacitance spectroscopy of semiconductors 2019

Finding the best capacitance spectroscopy of semiconductors suitable for your needs isnt easy. With hundreds of choices can distract you. Knowing whats bad and whats good can be something of a minefield. In this article, weve done the hard work for you.

Best capacitance spectroscopy of semiconductors

Product	Features	Editor's score	Go to site
	Capacitance Spectroscopy of Semiconductors		Go to amazon.com
	Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials (German Edition)		Go to amazon.com

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1. Capacitance Spectroscopy of Semiconductors

Description

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advancesin capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.

2. Scanning Capacitance Microscopy: and Spectroscopy on Semiconductor Materials (German Edition)

Feature

Scanning Capacitance Microscopy

Description

In this PhD-thesis, Scanning Capacitance Microscopy(SCM) and Scanning Capacitance Spectroscopy (SCS) was appliedto investigate various silicon samples. SCM is used to investigatethe electrical behaviour of samples with a lateral resolution below100 nm. The work is divided into 3 major experimental parts: (1)the properties of metal organic chemical vapour deposited zirconiumdioxide as dielectric material for SCM was explored. Usage ofzirconium dioxide leads to reduced leakage currents andimproved signal quality. (2) focussed ion beam induced damage insilicon was investigated with SCM. The beam shape and the rangeof ion damage inside the sample was investigated. The SCMdata were compared with transmission electron microscopy data.(3) a setup for quantitative Scanning Capacitance Spectroscopywith an external capacitance bridge connected to an atomic forcemicroscope was designed. This setup is sensitive enough to resolvethe energetic distribution of interface trapped charges and toquantitatively measure the local oxide charge density distributionof zirconium dioxide layers.

Conclusion

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